Formation and functionalization of Ge-nanoparticles in ZnO

Semiconductor nanocrystals are often proposed as a viable route to improve solar energy conversion in photovoltaics and photoelectrochemical systems. Embedding the in, e.g. transparent conducting electrode of cell will promote photon absorption subsequent transfer generated charge carriers from nanocrystal, thereby enhance function electrode. This can be accomplished by embedding semiconducting nanocrystal with small bandgap oxide (TCO), which is commonly utilized new generation cells. Here, we demonstrate incorporation, formation, functionalization germanium (Ge) zinc utilizing ion implantation, where post implantation annealing at 800 °C results diamond cubic Ge sizes between 2 20 nm. Photoluminecence spectra show distinct emission around 0.7 eV arising nanocrystals, additional features up 1.15 due quantum confinement, demonstrating novel tunability TCO